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TC6320 Datasheet(PDF) 2 Page - Supertex, Inc |
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TC6320 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 3 page TC6320 ________________________________________________________________________________ Supertex, Inc. January 21, 2003 2 BVDSS / BVDGS RDS(ON) (max) Order Number / Package N-Channel P-Channel N-Channel P-Channel SO-8 200V -200V 7.0 Ω 8.0 Ω TC6320TG N-Channel Electrical Characteristics (at TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS=0V, ID=2mA VGS(th) Gate Threshold Voltage 1.0 2.0 V VGS=VDS, ID=1mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/°C VGS=VDS, ID=1mA RGS Gate-Source Shunt Resistor 10 50 K Ω IGS=100µA ∆RGS Change in RGS with Temperature TBD %/°C IGS=100µA VzGS Gate-Source Zener Voltage 13.2 25 V IGS=2mA ∆VzGS Change in VzGS with Temperature TBD mV/°C IGS=2mA 10 µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current 1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C 1.0 VGS=4.5V, VDS=25V ID(ON) On-State Drain Current 2.0 A VGS=10V, VDS=25V 8.0 VGS=4.5V, ID=150mA RDS(ON) Static Drain-to-Source ON-State Resistance 7.0 Ω VGS=10V, ID=1.0A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=4.5V, ID=150mA GFS Forward Transconductance 400 mmho VDS=25V, ID=200mA CISS Input Capacitance 110 COSS Common Source Output Capacitance 60 CRSS Reverse Transfer Capacitance 23 pF VGS=0V, VDS=25V f=1MHz td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-Off Delay Time 20 tf Fall Time 15 ns VDD=25V, ID=1.0A RGEN=25 Ω VSD Diode Forward Voltage Drop 1.8 V VGS=0V, ISD=0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. N-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTPUT 10V 0V 0V V DD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 10% 90% 90% 10% 90% 10% |
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