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VP2206N2 Datasheet(PDF) 2 Page - Supertex, Inc |
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VP2206N2 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR*IDRM @ TC = 25°C °C/W °C/W TO-39 -0.75A -8.0A 6.0W 20.8 125 -0.75A -8.0A TO-92 -0.64A -4.0A 1.0W 125 170 -0.64A -4.0A * I D (continuous) is limited by max rated Tj. VP2206 Switching Waveforms and Test Circuit Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -60 V V GS = 0V, I D = -10mA VGS(th) Gate Threshold Voltage -1.0 -3.5 V VGS = VDS, ID = -10mA ∆VGS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/°CVGS = VDS, ID = -10mA I GSS Gate Body Leakage -1 -100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -50 µAVGS = 0V, VDS = Max Rating -10 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.85 -2 VGS = -5V, VDS = -25V -4 -9 A V GS = -10V, VDS =- 25V RDS(ON) 1.3 1.5 VGS = -5V, ID = -1A 0.75 0.9 Ω VGS = -10V, ID = -3.5A ∆RDS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/°CVGS = -10V, ID = -3.5A G FS Forward Transconductance 0.8 1.4 V DS = -25V, ID = -2A CISS Input Capacitance 325 450 C OSS Common Source Output Capacitance 125 180 pF C RSS Reverse Transfer Capacitance 30 40 td(ON) Turn-ON Delay Time 4 15 t r Rise Time 16 25 t d(OFF) Turn-OFF Delay Time 16 50 tf Fall Time 22 50 V SD Diode Forward Voltage Drop -1.1 -1.6 V V GS = 0V, ISD = -3.5A t rr Reverse Recovery Time 500 ns V GS = 0V, ISD = -1A Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance V GS = 0V, VDS = -25V f = 1 MHz V DD = -25V ns I D = -4A R GEN = 10Ω |
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