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ZXMP10A17E6TC Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMP10A17E6TC Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 7 page ZXMP10A17E6 SEMICO NDUC TORS ISSUE 2 - SEPTEMBER 2005 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS -100 V ID= -250µA, VGS=0V Zero Gate Voltage Drain Current IDSS -1.0 A VDS= -100V, VGS=0V Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V Gate-Source Threshold Voltage VGS(th) -2.0 -4.0 V ID= -250µA, VDS=VGS Static Drain-Source On-State Resistance (1) RDS(on) 0.350 0.450 VGS=-10V, ID=-1.4A VGS=-6V,ID=-1.2A Forward Transconductance (1)(3) gfs 2.8 S VDS= -15V, ID=-1.4A DYNAMIC (3) Input Capacitance Ciss 424 pF VDS= -50V, VGS=0V f=1MHz Output Capacitance Coss 36.6 pF Reverse Transfer Capacitance Crss 29.8 pF SWITCHING(2) (3) Turn-On Delay Time td(on) 3.0 ns VDD= -50V, ID=-1A RG ≅ 6.0Ω,VGS=-10V Rise Time tr 3.5 ns Turn-Off Delay Time td(off) 13.4 ns Fall Time tf 7.2 ns Gate Charge Qg 6.1 nC VDS= -50V, VGS=-5V ID= -1.4A Total Gate Charge Qg 10.7 nC VDS= -50V, VGS=-10V ID= -1.4A Gate-Source Charge Qgs 1.7 nC Gate-Drain Charge Qgd 3.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -0.95 V Tj=25°C, IS=-1.7A, VGS=0V Reverse Recovery Time (3) trr 33 ns Tj=25°C, IS=-1.5A, di/dt=100A/ µs Reverse Recovery Charge (3) Qrr 48 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width =300µs. Duty cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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