HY57V28820HCT-SI datasheet(6/11 Pages) HYNIX

Part #	HY57V28820HCT-SI

Description	4Banks x 4M x 8bits Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V28820HC(L)T-I

Rev. 0.1/Jan. 01

6

DC CHARACTERISTICS II (TA= -40 to 85°C, VDD=3.3±0.3V, VSS=0V)

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.

2.Min. of tRRC (Refresh RAS cycle time) is applied to HY57V28820HC(L)T-6I/KI/HI/8I/PI/SI which are listed on AC characteristic II.

3.HY57V28820HCT-6I/KI/HI/8I/PI/SI

4.HY57V28820HCLT-6I/KI/HI/8I/PI/SI

5.

Parameter

Symbol

Test Condition

Speed

Unit

Note

-6I

-KI

-HI

-8I

-PI

-SI

Operating Current

IDD1

Burst length=1, One bank active

tRC

≥ tRC(min), IOL=0mA

120

110

100

mA

1

Precharge Standby Current

in Power Down Mode

IDD2P

CKE

≤ VIL(max), tCK = 15ns

2

mA

IDD2PS

CKE

≤ VIL(max), tCK =

∞

1

Precharge Standby Current

in Non Power Down Mode

IDD2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

30ns. All other pins

≥ VDD-0.2V or ≤ 0.2V

15

mA

IDD2NS

CKE

≥ VIH(min), tCK =

∞

Input signals are stable.

15

Active Standby Current

in Power Down Mode

IDD3P

CKE

≤ VIL(max), tCK = 15ns

5

mA

IDD3PS

CKE

≤ VIL(max), tCK =

∞

5

Active Standby Current

in Non Power Down Mode

IDD3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

30ns. All other pins

≥ VDD-0.2V or ≤ 0.2V

30

mA

IDD3NS

CKE

≥ VIH(min), tCK =

∞

Input signals are stable.

20

Burst Mode Operating

Current

IDD4

tCK

≥ tCK(min), IOL=0mA

All banks active

CL=3

140

120

110

mA

1

CL=2

150

130

110

Auto Refresh Current

IDD5

tRRC

≥ tRRC(min), All banks active

240

220

200

mA

2

Self Refresh Current

IDD6

CKE

≤ 0.2V

2mA

3

800

uA

4

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