1

Publication date: March 2004

SKB00003CED

Varistors

Silicon epitaxial planar type

For reduced voltage and temperature compensation

■ Features

• Extremely small reverse current I

R

• High reliability with planar structure

• Wide forward voltage V

■ Absolute Maximum Ratings T

Unit: mm

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage MA3X028WA/WB

= 10 µA

0.77

V

MA3X028TA/TB

1.15

Forward voltage MA3X0280A

= 1.5 mA

0.56

0.61

V

MA3X0280B

0.59

0.64

MA3X028WA

1.18

1.28

MA3X028WB

1.26

1.36

MA3X028TA

1.76

1.92

MA3X028TB

1.88

2.04

Reverse current

= 6 V

1.0

µA

Temperature

MA3X0280A/B

−∆V

∆TI

F

= 3 mA

2.0

mV/

°C

coefficient of

MA3X028WA/B

4.6

2

MA3X028TA/B

6.5

■ Electrical Characteristics T

a

Parameter

Symbol

Rating

Unit

Reverse voltage

6V

Peak forward MA3X0280A/B

150

mA

current

MA3X028WA/WB

100

MA3X028TA/TB

70

Power dissipation

150

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

Marking Symbol

• MA3X0280A

: MD

• MA3X0280B

: ME

• MA3X028WA : MF

• MA3X028WB : MK

• MA3X028TA

: ML

• MA3X028TB

: MM

Note) The part numbers in the parenthesis show conventional part number.

1: Anode

2: N.C.

3: Cathode

EIAJ: SC-59

Mini3-G1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 100 MHz