1

Schottky Barrier Diodes (SBD)

MA3X721

Silicon epitaxial planar type

For super-high speed switching circuit

For small current rectification

I Features

• Sealed in the mini type mold package, allowing insertion

• Allowing to rectify under (I

• High reliability

I Absolute Maximum Ratings T

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Non-repetitive peak forward

1A

Peak forward current

300

mA

Average forward current

200

mA

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

50

µA

Forward voltage (DC)

0.55

V

Terminal capacitance

30

pF

3.0

ns

I Electrical Characteristics T

a

= 25°C

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

 

2. Rated input/output frequency: 1 000 MHz

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

Internal Connection

Marking Symbol: M1M

JEDEC : TO-236

EIAJ : SC-59

Mini Type Package (3-pin)

1 : Anode

2 : NC

3 : Cathode

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65

± 0.15

0.65

± 0.15

3

1

2

0.4

± 0.2

0.1 to 0.3

1

2

3

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A