TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

Advance Product Information

November 11, 2005

3

TABLE II

RF CHARACTERIZATION TABLE

qC, Nominal)

Bias Conditions: Vd = 6V, Idq = 420mA

SYMBOL

PARAMETER

TEST CONDITION

NOMINAL

UNITS

Gain

Small Signal Gain

f = 28-31 GHz

19

dB

IRL

Input Return Loss

f = 28-31 GHz

16

dB

ORL

Output Return Loss

f = 28-31 GHz

10

dB

Psat

Saturated Output Power

f = 28-31 GHz

30.5

dBm

P1dB

Output Power @ 1dB

Compression

f = 28-31 GHz

30

dBm

TABLE III

THERMAL INFORMATION

PARAMETER

TEST CONDITION

(

qC)

(

qC/W)

MTTF

(HRS)

(Channel to package)

141

22.4

2.2 E+6

Note: Backside of package is at 85

°C baseplate temperature. Worst case is

at saturated output power when DC power consumption rises to 4.8 W with

1 W RF power delivered to load. Power dissipated is 3.8 W and the

temperature rise in the channel is 85

°C. Baseplate temperature must be

reduced to 65

°C to remain below the 150 °C maximum channel

temperature.

TGA4509-SM