Advance Product Information

September 19, 2005

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

3

TABLE III

RF CHARACTERIZATION TABLE 1/

SYMBOL

PARAMETER

f = 10 GHz

f = 18 GHz

UNITS

Vd = 10V

Idq = 448 mA

Vd = 12V

Idq = 448 mA

Vd = 10V

Idq = 448 mA

Vd = 12V

Idq = 448 mA

Power Tuned:

Psat

PAE

Gain

Rp 2/

Cp 2/

Γ

Saturated Output Power

Power Added Efficiency

Power Gain

Parallel Resistance

Parallel Capacitance

Load Reflection

coefficient

38.8

51.6

12.3

3.34

3.812

0.922

∠ 176.3

39.4

50

7.8

4.13

3.607

0.916

∠140.4

37.6

42

12.1

3.41

3.151

0.952

∠176.2

38.1

38

7.6

4.00

3.473

0.955

∠175.9

dBm

%

dB

Ω

pF

-

Efficiency

Tuned:

Psat

PAE

Gain

Rp 2/

Cp 2/

Γ

Saturated Output Power

Power Added Efficiency

Power Gain

Parallel Resistance

Parallel Capacitance

Load Reflection

coefficient

37.6

57.0

12.4

6.68

4.425

0.942

∠173.6

39.0

53.8

12.4

6.49

3.947

0.931

∠173.3

37.2

44.0

7.9

4.01

3.566

0.957

∠175.9

37.9

41.0

7.6

4.49

3.736

0.962

∠175.8

dBm

%

dB

Ω

pF

-

1/ Values in this table are from measurements taken from a 0.75mm unit pHEMT cell at 10 and 18 GHz

2/ Large signal equivalent pHEMT output network

3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz

4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.

The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded

TABLE IV

THERMAL INFORMATION

Parameter

Test Conditions

(

(

qC/W)

(HRS)

θ

JC

Thermal Resistance

(channel to backside of carrier)

Vd = 12 V

Idq = 448 mA

Pdiss = 8.96 W

146

14.2

1.4E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70

°C baseplate temperature.

TGF2022-60