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MA4S159 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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MA4S159 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page Switching Diodes 1 MA4S159 Silicon epitaxial planar type For switching circuits I Features • Small S-mini type 4-pin package • Two isolated elements contained in one package, allowing high- density mounting • Flat lead type, resulting in improved mounting efficiency and solderability with the high-speed mounting machine • Short reverse recovery time t rr • Small terminal capacitance, C t I Absolute Maximum Ratings T a = 25°C Unit : mm Parameter Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward Single IF(AV) 100 mA current Double 75 Peak forward Single IFM 225 mA current Double 170 Non-repetitive peak Single IFSM 500 mA forward surge current* Double 375 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Internal Connection Note) * : t = 1 s Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 0.1 µA Forward voltage (DC) VF IF = 100 mA 0.95 1.2 V Reverse voltage (DC) VR IR = 100 µA80 V Terminal capacitance Ct VR = 0 V, f = 1 MHz 0.9 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V 3 ns Irr = 0.1 · IR, RL = 100 Ω I Electrical Characteristics T a = 25°C Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit 4 3 1 2 2.1 ± 0.1 1.25 ± 0.1 1 23 4 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) Marking Symbol: M1B Bias Application Unit N-50BU 90% Pulse Generator (PG-10N) R s = 50 Ω W.F.Analyzer (SAS-8130) R i = 50 Ω t p = 2 µs t r = 0.35 ns δ = 0.05 I F = 10 mA V R = 6 V R L = 100 Ω 10% Input Pulse Output Pulse I rr = 0.1 · IR t r t p t rr V R I F t t A |
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