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BTP8550SA3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTP8550SA3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C312A3 Issued Date : 2003.10.07 Revised Date : Page No. : 1/4 BTP8550SA3 CYStek Product Specification General Purpose PNP Epitaxial Planar Transistor BTP8550SA3 Description The BTP8550SA3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • Large collector current , IC= -700mA • Low VCE(sat) • Complementary to BTN8050SA3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA Base Current IB -100 mA Power Dissipation Pd 625 mW Thermal Resistance, Junction to Ambient RθJA 200 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C TO-92 BTP8550SA3 B:Base C:Collector E:Emitter E C B |
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