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DTC114TN3 Datasheet(PDF) 2 Page - Cystech Electonics Corp. |
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DTC114TN3 Datasheet(HTML) 2 Page - Cystech Electonics Corp. |
2 / 3 page CYStech Electronics Corp. Spec. No. : C254N3 Issued Date : 2002.06.01 Revised Date : 2002.11.02 Page No. : 2/3 DTA114TN3 CYStek Product Specification Electrical Characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage VCBO -50 - - V IC=-50uA Collector-Emitter Breakdown Voltage VCEO -50 - - V IC=-1mA Emitter-Base Breakdown Voltage VEBO -5 - - V IE=-50uA Collector-Base Cutoff Current ICBO - - -0.5 uA VCB=-50V Emitter-Base Cutoff Current IEBO - - -0.5 uA VEB=-4V Collector-Emitter Saturation Voltage VCE(sat) - 0.1 -0.3 V IC=-10mA, IB=-1mA DC Current Gain hFE 100 - 600 - VCE=-5V, IC=-1mA Input Resistance R 7 10 13 k Ω - Transition Frequency fT - 250 - MHz VCE=-10V, IE=-5mA, f=100MHz* * Transition frequency of the device Characteristic Curves Current Gain vs Collector Current 10 100 1000 0.1 1 10 100 Collector Current---IC(mA) HFE@VCE=5 Saturation Voltage vs Collector Current 10 100 1000 1 10 100 Collector Current---IC(mA) VCE(SAT)@IC=10I PD - Ta 0 50 100 150 200 250 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) |
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