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MA1150-M Datasheet(PDF) 11 Page - Panasonic Semiconductor

Part # MA1150-M
Description  Vertical Driver LSI for Video Camera CCD Area Image Sensor
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA1150-M Datasheet(HTML) 11 Page - Panasonic Semiconductor

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For Video Equipment
MN3111H
Usage Notes
External components
1. This product requires eight Schottky barrier diodes and two Zener diodes.
We recommend the following components.
Schottky barrier diodes:
MA723 or equivalents
Zener diodes:
MA1150-M, MA8150-M (for positive regulated voltage) or equivalents
MA1100-M, MA8100-M (for negative regulated voltage) or equivalents
Ta=25˚C
Component
Model number
Typical characteristics
Notes
Schottky barrier diodes
MA723
IF =200mA, VF ≤ 0.55V
MA1150-M
IZ=5mA, 14.6V ≤ VZ ≤ 15.35V
for positive
Zener diodes
MA8150-M
regulated voltage
MA1100-M
IZ=5mA, 9.75V ≤ VZ ≤ 10.25V
for negative
MA8100-M
regulated voltage
The MN3111H will not operate properly if the components do not satisfy the above specifications.
2. Always use the specified components for peripheral circuits so as to ensure that OVEE and VL do not reverse
potentials when the power is turned off.
As the above sketch illustrates, allowing OVEE to exceed VL1 and VL2 by more than 0.7 V produces the risk
of applying a forward bias to the PN junction, turning on the parasitic transistor, and generating an
overcurrent that produces latch-up.
If this phenomenon arises, increase the size of capacitor C7 or decrease the size of capacitor C13 to increase
the OVEE time constant.
(See the sample application circuit for the locations of C7 and C13.)
Normal operation
GND
OFF
VL1/VL2
OVEE
Faulty operation
0.7V or higher
Reversal
GND
OFF
VL1/VL2
OVEE


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