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Q67007-A9374 Datasheet(PDF) 5 Page - Infineon Technologies AG |
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Q67007-A9374 Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 16 page BTS 7740 G Data Sheet 5 2001-02-01 1.6 Circuit Description Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the internal gate-driving units of the N-channel vertical power-MOS-FETs. Output Stages The output stages consist of an low R DS ON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body diodes can be used for freewheeling when commutating inductive loads. If the high-side switches are used as single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by integrated power clamp diodes. Short Circuit Protection The outputs are protected against – output short circuit to ground – output short circuit to the supply voltage, and – overload (load short circuit). An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage- Drop with an internal reference voltage. Above this trippoint the OP-Amp reduces the output current depending on the junction temperature and the drop voltage. In the case of overloaded high-side switches the status output is set to low. The fully protected low-side switches have no status output. Overtemperature Protection The high-side and the low-side switches also incorporate an overtemperature protection circuit with hysteresis which switches off the output transistors. In the case of the high- side switches, the status output is set to low. Undervoltage-Lockout (UVLO) When V S reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The High-Side output transistors are switched off if the supply voltage V S drops below the switch off value V UVOFF. |
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