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534BC622M080BG Datasheet(PDF) 6 Page - Silicon Laboratories |
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534BC622M080BG Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 12 page Si550 6 Preliminary Rev. 0.3 Table 8. Absolute Maximum Ratings Parameter Symbol Rating Units Supply Voltage VDD –0.5 to +3.8 Volts Input Voltage VI –0.5 to VDD + 0.3 Volts Storage Temperature TS –55 to +125 ºC ESD Sensitivity (HBM, per JESD22-A114) ESD >2500 Volts Soldering Temperature (lead-free profile) TPEAK 260 ºC Soldering Temperature Time @ TPEAK (lead-free profile) tP 10 seconds Note: Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional operation or specification compliance is not implied at these conditions. Table 9. Environmental Compliance The Si550 meets the following qualification test requirements. Parameter Conditions/ Test Method Mechanical Shock MIL-STD-883F, Method 2002.3 B Mechanical Vibration MIL-STD-883F, Method 2007.3 A Solderability MIL-STD-883F, Method 203.8 Gross & Fine Leak MIL-STD-883F, Method 1014.7 Resistance to Solvents MIL-STD-883F, Method 2016 |
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