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MX28F160C3TXAC-11 Datasheet(PDF) 1 Page - Macronix International |
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MX28F160C3TXAC-11 Datasheet(HTML) 1 Page - Macronix International |
1 / 44 page 1 P/N:PM0867 REV. 1.2, MAR. 17, 2004 MX28F160C3T/B 16M-BIT[1Mx16]CMOSSINGLEVOLTAGE 3VONLYFLASHMEMORY - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report • Automatic sector erase, word write and sector lock/ unlock configuration • Status Reply - Detection of program and erase operation comple- tion. - Command User Interface (CUI) - Status Register (SR) • Data Protection Performance - Include boot sectors and parameter and main sectors to be locked/unlocked • 100,000 minimum erase/program cycles • Common Flash Interface (CFI) • 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User-Programmable • Latch-up protected to 100mA from -1V to VCC+1V • Package type: - 48-pin TSOP (12mm x 20mm) - 48-ball CSP (8mm x 6mm) FEATURES • Bit Organization: 1,048,576 x 16 • Single power supply operation - VCC=VCCQ=2.7~3.6V for read, erase and program operation - VPP=12V for fast production programming - Operating temperature:-40 °C~85°C • Fast access time : 70/90/110ns • Low power consumption - 9mA typical active read current, f=5MHz - 18mA typical program current (VPP=1.65~3.6V) - 21mA typical erase current (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode • Sector architecture - Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x 31 (main sectors) - Top/Bottom Boot • Auto Erase and Auto Program - Automatically program and verify data at specified address - Auto sector erase at specified sector • Automatic Suspend Enhance GENERAL DESCRIPTION The MX28F160C3T/B is a 16-mega bit Flash memory organized as 1M words of 16 bits. The 1M word of data is arranged in eight 4Kword boot and parameter sectors, and thirty-one 32K word main sectors which are indi- vidually erasable. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F160C3T/B is packaged in 48-pin TSOP and 48-ball CSP. It is designed to be re- programmed and erased in system or in standard EPROM programmers. The standard MX28F160C3T/B offers access time as fast as 70ns, allowing operation of high-speed micropro- cessors without wait states. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F160C3T/B uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maxi- mum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming |
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