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MX28F160C3TXAI-70 Datasheet(PDF) 2 Page - Macronix International |
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MX28F160C3TXAI-70 Datasheet(HTML) 2 Page - Macronix International |
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2 / 44 page  2 P/N:PM0867 MX28F160C3T/B REV. 1.2, MAR. 17, 2004 mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cy- cling. The MX28F160C3T/B uses a 2.7V~3.6V VCC sup- ply to perform the High Reliability Erase and auto Pro- gram/Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. The dedicated VPP pin gives complete data protection when VPP< VPPLK. A Command User Interface (CUI) serves as the inter- face between the system processor and internal opera- tion of the device. A valid command sequence written to the CUI initiates device automation. An internal Write State Machine (WSM) automatically executes the algo- rithms and timings necessary for erase, word write and sector lock/unlock configuration operations. A sector erase operation erases one of the device's 32K- word sectors typically within 1.0s, 4K-word sectors typi- cally within 0.5s independent of other sectors. Each sec- tor can be independently erased minimum 100,000 times. Sector erase suspend mode allows system software to suspend sector erase to read or write data from any other sector. Writing memory data is performed in word increments of the device's 32K-word sectors typically within 0.8s and 4K-word sectors typically within 0.1s. Word program sus- pend mode enables the system to read data or execute code from any other memory array location. MX28F160C3T/B features with individual sectors lock- ing by using a combination of bits thirty-nine sector lock- bits and WP, to lock and unlock sectors. The status register indicates when the WSM's sector erase, word program or lock configuration operation is done. The access time is 70/90/110ns (tELQV) over the oper- ating temperature range (-40 °C to +85°C) and VCC sup- ply voltage range of 2.7V~3.6V. MX28F160C3T/B's power saving mode feature substan- tially reduces active current when the device is in static mode (addresses not switching). In this mode, the typi- cal ICCS current is 7uA (CMOS) at 3.0V VCC. As CE and RP are at VCC, ICC CMOS standby mode is enabled. When RP is at GND, the reset mode is enabled which minimize power consumption and provide data write protection. A reset time (tPHQV) is required from RP switching high until outputs are valid. Similarly, the device has a wake time (tPHEL) from RP-high until writes to the CUI are recognized. With RP at GND, the WSM is reset and the status register is cleared. |
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