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MX29F040CQI-90 Datasheet(PDF) 4 Page - Macronix International |
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MX29F040CQI-90 Datasheet(HTML) 4 Page - Macronix International |
4 / 38 page 4 P/N:PM1201 REV. 1.0, DEC. 20, 2005 MX29F040C AUTOMATIC PROGRAMMING The MX29F040C is byte programmable using the Auto- matic Programming algorithm. The Automatic Program- ming algorithm makes the external system do not need to have time out sequence nor to verify the data pro- grammed. The typical chip programming time at room temperature of the MX29F040C is less than 4.5 sec- onds. AUTOMATIC CHIP ERASE The entire chip is bulk erased using 10 ms erase pulses according to MXIC's Automatic Chip Erase algorithm. Typical erasure at room temperature is accomplished in less than 4 second. The Automatic Erase algorithm au- tomatically programs the entire array prior to electrical erase. The timing and verification of electrical erase are controlled internally within the device. AUTOMATIC SECTOR ERASE The MX29F040C is sector(s) erasable using MXIC's Auto Sector Erase algorithm. Sector erase modes allow sectors of the array to be erased in one erase cycle. The Automatic Sector Erase algorithm auto- matically programs the specified sector(s) prior to electrical erase. The timing and verification of electri- cal erase are controlled internally within the device. AUTOMATIC PROGRAMMING ALGORITHM MXIC's Automatic Programming algorithm require the user to only write program set-up commands (including 2 un- lock write cycle and A0H) and a program command (pro- gram data and address). The device automatically times the programming pulse width, provides the program veri- fication, and counts the number of sequences. A status bit similar to Data# Polling and a status bit toggling be- tween consecutive read cycles, provide feedback to the user as to the status of the programming operation. AUTOMATIC ERASE ALGORITHM MXIC's Automatic Erase algorithm requires the user to write commands to the command register using stand- ard microprocessor write timings. The device will auto- matically pre-program and verify the entire array. Then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the sta- tus of the programming operation. Register contents serve as inputs to an internal state- machine which controls the erase and programming cir- cuitry. During write cycles, the command register inter- nally latches address and data needed for the program- ming and erase operations. During a system write cycle, addresses are latched on the falling edge of WE# or CE#, whichever happens later, and data are latched on the rising edge of WE# or CE#, whichever happens first. MXIC's Flash technology combines years of EPROM experience to produce the highest levels of quality, relia- bility, and cost effectiveness. The MX29F040C electri- cally erases all bits simultaneously using Fowler-Nord- heim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injec- tion. During a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. During a Sector Erase cycle, the command register will only respond to Erase Suspend command. After Erase Suspend is completed, the device stays in read mode. After the state machine has completed its task, it will allow the command regis- ter to respond to its full command set. |
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