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MX29F040CPI-90G Datasheet(PDF) 1 Page - Macronix International |
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MX29F040CPI-90G Datasheet(HTML) 1 Page - Macronix International |
1 / 38 page FEATURES • 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, erase and program op- eration • Fast access time: 55/70/90ns • Compatible with MX29F040 device • Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current • Command register architecture - Byte Programming (9us typical) - Sector Erase 8 equal sectors of 64K-Byte each • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability - Automatically program and verify data at specified address • Erase suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, another sector that is not being erased, erase and programming, while maintaining maximum EPROM compatibility. MXIC Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F040C uses a 5.0V ±10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. GENERAL DESCRIPTION The MX29F040C is a 4-mega bit Flash memory orga- nized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The MX29F040C is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F040C offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F040C has separate chip enable (CE#) and output enable (OE#) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F040C uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during then resumes the erase • Status Reply - Data# Polling & Toggle bit for detection of program and erase cycle completion • Sector protect/chip unprotect for 5V only system • Sector protection - Hardware method to disable any combination of sec- tors from program or erase operations - Temporary sector unprotect allows code changes in previously locked sectors • 100,000 minimum erase/program cycles • 100,000 minimum erase/program cycles • Latch-up protected to 100mA from -1V to VCC+1V • Low VCC write inhibit is equal to or less than 3.2V • Package type: - 32-pin PLCC, TSOP or PDIP - All Pb-free devices are RoHS Compliant • Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash • 20 years data retention 1 P/N:PM1201 REV. 1.0, DEC. 20, 2005 MX29F040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY |
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