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FEATURES

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Broad Frequency Range : 2100 to 2200MHz

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Proven Reliability

DESCRIPTION

The EGN21A045IV is a 45 Watt GaN-HEMT that offers high efficiency,

high gain, ease of matching, greater consistency and broad bandwidth

for high power L-band amplifiers with 50V operation. This device is

targeted for high voltage, low current operation in digitally modulated

base station applications - ideally suited for W-CDMA base station

amplifiers and other HPA designs while offering ease of use.

ABSOLUTE MAXIMUM RATINGS

Item

Symbol

Condition

Rating

Unit

Drain-Source Voltage

120

V

Gate-Source Voltage

-5

V

Total Power Dissipation

112

W

Storage Temperature

-65 to +175

Channel Temperature

250

Item

Symbol

Condition

Limit

Unit

Min. Typ. Max.

Pinch-Off Voltage

-1.0

-2.0

-3.5

V

Gate-Drain Breakdown Voltage

-

-350

-

V

3rd Order Inter modulation Distortion

-

-32

-

dBc

Power Gain

15.0

16.0

-

dB

Drain Efficiency

-

35

-

%

Note 1

Thermal Resistance

Channel to Case

-

1.8

2.0

Note 1 : IM3 and Gain test condition as follows:

IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch

67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured

over 3.84MHz at fo-10MHz and fI+10MHz.

Edition 1.0

June 2005

1

Item

Symbol

Condition

Limit

Unit

DC Input Voltage

50

V

Forward Gate Current

Ω

<9.7

mA

Reverse Gate Current

Ω

>-3.6

mA

Channel Temperature

200

EGN21A045IV

High Voltage - High Power GaN-HEMT

Preliminary

Eudyna GaN-HEMT 45W