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EGN21A045IV Datasheet(PDF) 2 Page - Eudyna Devices Inc

Part # EGN21A045IV
Description  High Voltage - High Power GaN-HEMT
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Manufacturer  EUDYNA [Eudyna Devices Inc]
Direct Link  http://www.sei-device.com/index.asp
Logo EUDYNA - Eudyna Devices Inc

EGN21A045IV Datasheet(HTML) 2 Page - Eudyna Devices Inc

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EGN21A045IV
High Voltage - High Power GaN-HEMT
Output Power vs. Frequency
VDS=50V, IDS=250mA
2-tone IMD vs. Output Power
VDS=50V, f1=2.135GHz, f2=2.145GHz, 10MHz Spacing
2-tone IMD vs. Tone Spacing, VDS=50V, IDS=250mA
Pout=39dBm(average) Center Frequency=2.14GHz
Output Power and Drain Efficiency vs. Input Power
VDS=50V, IDS=250mA, f=2.14GHz
36
38
40
42
44
46
48
2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24
Frequency [GHz]
Pin=21dBm
Pin=23dBm
Pin=25dBm
Pin=27dBm
Pin=29dBm
Pin=31dBm
Pin=33dBm
Pin=35dBm
-50
-45
-40
-35
-30
-25
-20
24 26 28 30 32 34 36 38 40 42 44
Output Power(average) [dBm]
125mA
250mA
375mA
500mA
-55
-50
-45
-40
-35
-30
-25
-20
2-tone Spacing [MHz]
IM3 lower
IM3 upper
IM5 lower
IM5 upper
IM7 lower
IM7 upper
0.1
1.0
10
28
30
32
34
36
38
40
42
44
46
48
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Input Power [dBm]
0
10
20
30
40
50
60
70
80
90
100
Drain
Effi.
Output
Power


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