FEATURES

• 10Gb/s Modulator Integrated DFB Laser Diode Module

• Wavelength: ITU-T grid W9180 (1563.05nm) thru W9600 (1529.55nm)

• 1600 ps/nm Dispersion

• Compact package with GPO connector

• Built-in Optical Isolator, Ternary PIN-PD for monitor, thermistor and

thermoelectric cooler

• Wavelength locker integrated MI-DFB

APPLICATION

This MI DFB laser is intended for long reach applications (80km)

at 10Gb/s.

DESCRIPTION

The Modulator Integrated DFB Laser (MI DFB Laser) with Wavelength Locker has an

electro-absorption modulator monolithically integrated with a conventional Distributed

Feed-Back (DFB) laser. The modulation voltage is applied to the modulator section while the

laser section operates CW allowing extremely low wavelength chirping. Extinction ratios of

more that 10dB can be achieved with 2.6 Vp-p modulation. The MI laser is installed in a but-

terfly type package. The tuned wavelength can be locked onto the desired ITU-T grid channel

via use of the included fabry-perot etalon. The module incorporates a highly stable optical

coupling system. The module includes an optical isolator, monitor photodiode, thermistor and

a thermo-electric cooler.

Parameter

Symbol

Storage Temperature

Tstg

+85

-

-40

Operating Case Temperature

+70

-

Top

-20

Optical Output Power

5

CW

mW

Pf

-

Laser Forward Current

150

CW

mA

IF

-

Laser Reverse Voltage

2

CW

V

VR

-

Modulator Forward Voltage

+1

CW

V

Vm

-5

Photodiode Forward Current

1

-mA

--

10

-V

Photodiode Reverse Voltage

VDR

-

10

260

°C

sec

Lead Soldering Time

--

TEC Voltage

+5

Cooling

-

Heating

V

Vc

-

-5

TEC Current

+2.5

Cooling

-

Heating

A

Ic

-

-0.6

Thermistor Temperature

+70

-20

ATC Operation

°C

Tth

Rating

Unit

Min.

Max.

ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)

Condition

1

Edition 1.1

July 2004

1,550nm MI DFB Laser

with Integrated Wavelength Locker

FLD5F20CE-E