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PNZ102F Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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PNZ102F Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page  1 Features Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors For optical control systems Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 30 V Collector to base voltage VCBO* 40 V Emitter to collector voltage VECO 5V Emitter to base voltage VEBO* 5V Collector current IC 50 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C * PNZ102F only 1: Emitter 2: Collector Unit : mm ø4.6 ±0.15 Glass window 2.54 ±0.25 ø5.75 max. 2-ø0.45 ±0.05 1 2 PNA1401LF 1: Emitter 2: Base 3: Collector Unit : mm ø4.6 ±0.15 Glass window 2.54 ±0.25 ø5.75 max. 3-ø0.45 ±0.05 1 3 2 PNZ102F |
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