X,Ku-Band Internally Matched FET

FEATURES

・

High Output Power: P1dB=42.0dBm(Typ.)

・

High Gain: G1dB=6.0dB(Typ.)

・

High PAE:

ηadd=26%(Typ.)

・

Broad Band: 14.0～14.5GHz

・

Impedance Matched Zin/Zout = 50

Ω

・

Hermetically Sealed Package

DESCRIPTION

The FLM1414-15F is a power GaAs FET that is internally matched

for standard communication bands to provide optimum power and

gain in a 50

Ω system.

CASE STYLE: IB

G.C.P.:Gain Compression Point , S.C.L.:Single Carrier Level

Edition 1.4

May 2004

1

FLM1414-15F

ESD

Class III

2000V

~

Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k

Ω)

Item

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

15

-5

75

-65 to +175

V

V

W

o

C

Channel Temperature

175

o

C

Power Gain at 1dB G.C.P.

Limit

Item

Symbol

Test Conditions

Unit

Drain Current

Output Power at 1dB G.C.P.

Gain Flatness

∆ G

A

V

dB

dBm

Min.

Typ.

Max.

Drain Current

mS

V

mA

-

6700

-

-0.5

-1.5

-3.0

-5.0

-

-

41.5

42.0

-

5.0

6.0

-

-

4200

5000

f=14.0 - 14.5 GHz

Ω

Power-added Efficiency

%

-

26

-

--

1.2

-

7.2

10.0

Transconductance

Pinch-off Voltage

Gate-Source Breakdown Voltage

µA

dB

3rd Order Intermodulation

Distortion

f=14.5 GHz

Δ

f=10MHz,2-Tone Test

Pout=30.0dBm(S.C.L.)

Thermal Resistance

-42.0

-45.0

-

dBc

Channel to Case

-

1.8

2.0

o

C/W

Channel Temperature Rise

10V x Idsr X Rth

--

80

o

C

Item

Symbol

Condition

Unit

DC Input Voltage

Forward Gate Current

≦

10

≦

48

V

mA

Limit

Ω

Reverse Gate Current

Ω

≧

-6.6

mA