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MX69F162C3BTXBI-70 Datasheet(PDF) 1 Page - Macronix International |
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MX69F162C3BTXBI-70 Datasheet(HTML) 1 Page - Macronix International |
1 / 51 page 1 P/N:PM1083 REV. 0.2, MAY 20, 2004 MX69F162/164C3BT/B ADVANCED INFORMATION FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85 °C • Fully compatible with MX69F1602/1604C3T/B device FLASH • Word mode only • VCCf=VCCQ=2.7V~3.6V for read, erase and program operation • VPP=12V for fast production programming • Low power consumption - 9mA typical active read current, f=5MHz - 18mA typical program current (VPP=1.65~3.6V) - 21mA typical erase current (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode • Sector architecture - Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x 31 (main sectors) - Top/Bottom Boot • Auto Erase and Auto Program - Automatically program and verify data at specified address - Auto sector erase at specified sector • Automatic Suspend Enhance - Word write suspend to read - Sector erase suspend to word write - Sector erase suspend to read register report • Automatic sector erase, word write and sector lock/ unlock configuration • 100,000 minimum erase/program cycles • Boot Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector • Status Register feature for detection of program or erase cycle completion • Data protection performance - Sectors to be locked/unlocked • Common Flash Interface (CFI) • 128-bit Protection Register - 64-bit Unique Device Identifier - 64-bit User-Programmable • Latch-up protected to 100mA from -1V to VCC+1V SRAM • MX69F162C3BT/B: 128K wordx16 Bit • MX69F164C3BT/B: 256K wordx16 Bit • 70mA maximum active current • 1uA typical standby current • Data retention supply voltage: 2.0V~3.6V • Byte data control : LBs#(Q0 to Q7) and UBs#(Q8 to Q15) 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXEDMULTICHIPPACKAGEMEMORY |
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