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MX29LV800CBXHC-55R Datasheet(PDF) 7 Page - Macronix International

Part # MX29LV800CBXHC-55R
Description  8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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Manufacturer  MCNIX [Macronix International]
Direct Link  http://www.macronix.com
Logo MCNIX - Macronix International

MX29LV800CBXHC-55R Datasheet(HTML) 7 Page - Macronix International

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P/N:PM1183
MX29LV800C T/B
REV. 1.4, APR. 24, 2006
AUTOMATIC PROGRAMMING
The MX29LV800C T/B is byte programmable using the
Automatic Programming algorithm. The Automatic Pro-
gramming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV800C T/B is less than 10
seconds.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the pro-
gram verification, and counts the number of sequences.
A status bit similar to DATA# polling and a status bit
toggling between consecutive read cycles, provide feed-
back to the user as to the status of the programming
operation. Refer to write operation status, table 8, for more
information on these status bits.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electri-
cal erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SECTOR ERASE
The MX29LV800C T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verifi-
cation of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number of
sequences. A status bit toggling between consecutive
read cycles provides feedback to the user as to the sta-
tus of the erasing operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches address and data needed for the program-
ming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE# or CE#, whichever
happens first.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29LV800C T/B
electrically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC SELECT
The auto select mode provides manufacturer and device
identification, and sector protection verification, through
identifier codes output on Q7~Q0. This mode is mainly
adapted for programming equipment on the device to be
programmed with its programming algorithm. When pro-
gramming by high voltage method, automatic select mode
requires VID (11.5V to 12.5V) on address pin A9 and
other address pin A6, A1 and A0 as referring to Table 3.
In addition, to access the automatic select codes in-sys-
tem, the host can issue the automatic select command
through the command register without requiring VID, as
shown in table 5.
To verify whether or not sector being protected, the sec-
tor address must appear on the appropriate highest order


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