UN1112 datasheet(2/14 Pages) PANASONIC

Part #	UN1112

Description	Silicon PNP epitaxial planer transistor

Download	14 Pages

Scroll/Zoom	100%

Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

Logo

2 / 14 page

2

UNR111x Series

SJH00001BED

■ Electrical Characteristics T

a = 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −10 µA, IE = 0

−50

V

Collector-emitter voltage (Base open)

VCEO

IC = −2 mA, IB = 0

−50

V

Collector-base cutoff current (Emitter open)

ICBO

VCB

= −50 V, I

E

= 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = −50 V, IB = 0

− 0.5

µA

Emitter-base

UNR1111

IEBO

VEB = −6 V, IC = 0

− 0.5

mA

cutoff current UNR1112/1114/111D/111E

− 0.2

(Collector open) UNR1113

− 0.1

UNR1110/1115/1116/1117

− 0.01

UNR111F/111H

−1.0

UNR1119

−1.5

UNR1118/111L

−2.0

Forward current UNR1111

hFE

VCE

= −10 V, I

C

= −5 mA

35



transfer ratio

UNR1112/111E

60

UNR1113/1114

80

UNR1110 */1115 */1116 */

160

460

1117 *

UNR1118/111L

20

UNR1119/111D/111F/111H

30

Collector-emitter saturation voltage

VCE(sat)

IC = −10 mA, IB = − 0.3 mA

− 0.25

V

Output voltage high-level

VOH

VCC

= −5 V, V

B

= − 0.5 V, R

L

= 1 kΩ−4.9

V

Output voltage low-level

VOL

VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2

V

UNR1113

VCC = −5 V, VB = −3.5 V, RL = 1 kΩ

UNR111D

VCC

= −5 V, V

B

= −10 V, R

L

= 1 kΩ

UNR111E

VCC = −5 V, VB = −6 V, RL = 1 kΩ

Transition frequency

fT

VCB = −10 V, IE = 2 mA, f = 200 MHz

80

MHz

Input resistance UNR1111/1114/1115

R1

−30%

10

+30%

k

Ω

UNR1112/1117

22

UNR1110/1113/111D/111E

47

UNR1116/111F/111L

4.7

UNR1118

0.51

UNR1119

1

UNR111H

2.2

Resistance ratio UNR1111/1112/1113/111L

R1/R2

0.8

1.0

1.2



UNR1114

0.17

0.21

0.25

UNR1118/1119

0.08

0.1

0.12

UNR111D

4.7

UNR111E

2.14

UNR111F

0.47

UNR111H

0.17

0.22

0.27

Rank

Q

R

S

hFE

160 to 260

210 to 340

290 to 460

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification (UNR1110/1115/1116/1117)

Similar Part No. - UN1112

Manufacturer	Part #	Datasheet	Description
Panasonic Semiconductor	UN11004	38Kb / 2P	Circuit Protector Elements
	UN11008	38Kb / 2P	Circuit Protector Elements
	UN11015	41Kb / 2P	Circuit Protector Elements
	UN11020	34Kb / 2P	Circuit Protector Elements
	UN11027	35Kb / 2P	Circuit Protector Elements

More results

Similar Description - UN1112

Manufacturer	Part #	Datasheet	Description
Panasonic Semiconductor	XP1601	56Kb / 5P	Silicon PNP(PNP) epitaxial planer transistor
	XN1111	34Kb / 2P	Silicon PNP epitaxial planer transistor
	XN1116	33Kb / 2P	Silicon PNP epitaxial planer transistor
	XN1118	34Kb / 2P	Silicon PNP epitaxial planer transistor
	XN4114	33Kb / 2P	Silicon PNP epitaxial planer transistor
	XN4130	34Kb / 2P	Silicon PNP epitaxial planer transistor
	XN6112	33Kb / 2P	Silicon PNP epitaxial planer transistor
	XN611FH	51Kb / 4P	Silicon PNP epitaxial planer transistor
	XP4112	33Kb / 2P	Silicon PNP epitaxial planer transistor
	XP4115	32Kb / 2P	Silicon PNP epitaxial planer transistor
	XP4116	32Kb / 2P	Silicon PNP epitaxial planer transistor

More results

UN1112 Datasheet(PDF) 2 Page - Panasonic Semiconductor

UN1112 Datasheet(HTML) 2 Page - Panasonic Semiconductor

Similar Part No. - UN1112

Similar Description - UN1112

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Datasheet Download

Link URL