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FMM5815GJ-1 Datasheet(PDF) 1 Page - Eudyna Devices Inc |
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FMM5815GJ-1 Datasheet(HTML) 1 Page - Eudyna Devices Inc |
1 / 4 page FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC Item Symbol Drain-Source Voltage VDD 10 V Gate-Source Voltage VGG -7.0 V Input Power Pin 22 dBm °C Storage Temperature -55 to +125 Tstg Condition Unit Rating ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 °C) Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDD) should not exceed 6 volts. Operating Case Temperature -40 to +85 °C Top 1 Edition 1.1 April 2002 Item Symbol Output Return Loss RLout Conditions Unit Limits Typ. Max. Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25 °C) Power Gain at 1 dB G.C.P. 18 20 23 - -6 - dB - 800 950 mA Input Return Loss RLin Iddrf -- -10 dB dB 3rd Order Intermodulation Distortion IM3 - -35 -30 dBc Frequency Range f GHz Output Power at 1 dB G.C.P. 29 31 - - 17.7 19.7 dBm P1dB G1dB G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Power-Added Efficiency at 1 dB G.C.P. Drain Current at 1 dB G.C.P. - -12 -15 mA Iggrf Gate Current at 1 dB G.C.P. -25 - % ηadd VDD = 6V VGG = -5V f = 17.7 ~ 19.7GHz IDD = 600mA (Typ.) ZS = ZL = 50Ω ∆f = 10MHz, 2-Tone Test, Pout = 20dBm S.C.L. CASE STYLE: GJ DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity, amplifier designed for operation in the17.7-19.7GHz frequency range. This amplifier has an input and output designed for use in 50 Ω systems.This device is well suited for point-to-point communication applications. FEATURES • High Output Power: P1dB = 31dBm (Typ.) • High Gain: G1dB = 20dB (Typ.) • High PAE: ηadd = 25% (Typ.) • Impedance Matched Zin/Zout = 50 Ω • 0.25µm PHEMT Technology |
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