FMM5815GJ-1

17.7-19.7GHz Power Amplifier MMIC

Item

Symbol

Drain-Source Voltage

VDD

10

V

Gate-Source Voltage

VGG

-7.0

V

Input Power

Pin

22

dBm

°C

Storage Temperature

-55 to +125

Tstg

Condition

Unit

Rating

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25

°C)

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (VDD) should not exceed 6 volts.

Operating Case Temperature

-40 to +85

°C

Top

1

Edition 1.1

April 2002

Item

Symbol

Output Return Loss

RLout

Conditions

Unit

Limits

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25

°C)

Power Gain at 1 dB G.C.P.

18

20

23

-

-6

-

dB

-

800

950

mA

Input Return Loss

RLin

Iddrf

--

-10

dB

dB

3rd Order Intermodulation

Distortion

IM3

-

-35

-30

dBc

Frequency Range

f

GHz

Output Power at 1 dB G.C.P.

29

31

-

-

17.7

19.7

dBm

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Power-Added Efficiency at 1 dB G.C.P.

Drain Current at 1 dB G.C.P.

-

-12

-15

mA

Iggrf

Gate Current at 1 dB G.C.P.

-25

-

%

ηadd

VDD = 6V

VGG = -5V

f = 17.7 ~ 19.7GHz

IDD = 600mA (Typ.)

ZS = ZL = 50Ω

∆f = 10MHz, 2-Tone Test,

Pout = 20dBm S.C.L.

CASE STYLE: GJ

DESCRIPTION

The FMM5815GJ is a packaged, high-gain, high linearity,

amplifier designed for operation in the17.7-19.7GHz

frequency range. This amplifier has an input and output

designed for use in 50

Ω systems.This device is well suited for

point-to-point communication applications.

FEATURES

• High Output Power: P1dB = 31dBm (Typ.)

• High Gain: G1dB = 20dB (Typ.)

• High PAE:

ηadd = 25% (Typ.)

• Impedance Matched Zin/Zout = 50

Ω

• 0.25µm PHEMT Technology