Transistors with built-in Resistor

1

Publication date: October 2003

SJH00001BED

Silicon PNP epitaxial planar transistor

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

■ Resistance by Part Number

• UNR1110 (UN1110)

47 k

Ω

• UNR1111 (UN1111)

10 k

Ω

10 k

Ω

• UNR1112 (UN1112)

22 k

Ω

22 k

Ω

• UNR1113 (UN1113)

47 k

Ω

47 k

Ω

• UNR1114 (UN1114)

10 k

Ω

47 k

Ω

• UNR1115 (UN1115)

10 k

Ω

• UNR1116 (UN1116)

4.7 k

Ω

• UNR1117 (UN1117)

22 k

Ω

• UNR1118 (UN1118)

0.51 k

Ω

5.1 k

Ω

• UNR1119 (UN1119)

1 k

Ω

10 k

Ω

• UNR111D (UN111D)

47 k

Ω

10 k

Ω

• UNR111E (UN111E)

47 k

Ω

22 k

Ω

• UNR111F (UN111F)

4.7 k

Ω

10 k

Ω

• UNR111H (UN111H)

2.2 k

Ω

10 k

Ω

• UNR111L (UN111L)

4.7 k

Ω

4.7 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

B

C

E

Internal Connection

Unit: mm

1: Base

2: Collector

3: Emitter

M-A1 Package

Note) The part numbers in the parenthesis show conventional part number.

(1.0)

(1.5)

(0.85)

(2.5)

(2.5)

21

3

R 0.7

R 0.9

(1.5)

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector current

−100

mA

Total power dissipation

400

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C