Technical Note

P0120008P

1W GaAs Power FET (Pb-Free Type)

SUMITOMO ELECTRIC

Ids=220mA

Ids=180mA

-100

-80

-60

-40

-20

0

20

40

60

80

-15

-10

-5

0

5

10

15

20

Pin (dBm)

Pout

Gain

IP3

ηadd

IM3

IM3/Pout

-100

-80

-60

-40

-20

0

20

40

60

80

-15

-10

-5

0

5

10

15

20

Pin (dBm)

Pout

Gain

IP3

ηadd

IM3

IM3/Pout

-100

-80

-100

-80

-60

-40

-20

0

20

40

60

80

-15

-10

-5

0

5

10

15

20

Pin (dBm)

Pout

Gain

IP3

ηadd

IM3

IM3/Pout

-60

-40

-20

0

20

40

60

80

-15

-10

-5

0

5

10

15

20

Pin (dBm)

Pout

Gain

IP3

ηadd

IM3

IM3/Pout

Device: P0120008P

Frequency: f1=2.1GHz f2=2.101GHz

Bias: Vds=8V, Ids=220mA

Source Matching: Mag 0.75 Ang -169.5°

Load Matching: Mag 0.36 Ang 175.9°

Device: P0120008P

Frequency: f1=2.1GHz f2=2.101GHz

Bias: Vds=8V, Ids=180mA

Source Matching: Mag 0.75 Ang -169.5°

Load Matching: Mag 0.32 Ang 144.6°

The data for the figures above were measured with the load impedance matched to IP3.

Id=220mA

Pin

(dBm)

Pout

(dBm)

Gain

(dB)

IM3

(dBm)

IM3/Pout

(dBc)

IP3

(dBm)

Id

(mA)

ηadd

(%)

-10.0

4.4

14.4

-68.1

-72.5

40.6

178.4

0.2

-5.0

9.5

14.5

-57.4

-66.8

42.9

173.4

0.6

0.0

14.5

14.5

-41.8

-56.3

42.7

165.8

2.0

5.0

19.5

14.5

-25.5

-45.0

41.8

162.8

6.6

10.0

24.5

14.5

-2.4

-26.8

37.4

170.3

19.8

15.0

29.3

14.3

13.8

-15.5

34.6

202.3

50.6

Id=180mA

Pin

(dBm)

Pout

(dBm)

Gain

(dB)

IM3

(dBm)

IM3/Pout

(dBc)

IP3

(dBm)

Id

(mA)

ηadd

(%)

-10.0

4.4

14.4

-66.3

-70.7

39.9

164.9

0.2

-5.0

9.5

14.5

-56.0

-65.5

42.3

159.6

0.7

0.0

14.6

14.6

-41.4

-56.0

42.6

151.8

2.3

5.0

19.6

14.6

-23.7

-43.3

41.3

147.5

7.5

10.0

24.6

14.6

0.8

-23.8

36.0

156.1

22.2

15.0

29.3

14.3

13.6

-15.7

34.6

189.3

53.6

Specifications and information are subject to change without notice.

2003-11

Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan

Phone: +81-45-853-7263 Fax: +81-45-853-1291

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