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HAT2172H Datasheet(PDF) 3 Page - Renesas Technology Corp |
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HAT2172H Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 10 page  HAT2172H Rev.4.00, Oct.29.2003, page 3 of 9 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 40 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ± 20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS ——± 10 µAVGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS ——1 µAVDS = 40 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 3.0 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) —5.8 7.5 m Ω ID = 15 A, VGS = 10 V Note4 resistance RDS(on) —6.6 9.2 m Ω ID = 15 A, VGS = 7 V Note4 Forward transfer admittance |yfs| 2745— S ID = 15 A, VDS = 10 V Note4 Input capacitance Ciss — 2420 — pF VDS = 10 V Output capacitance Coss — 480 — pF VGS = 0 Reverse transfer capacitance Crss — 150 — pF f = 1 MHz Gate Resistance Rg — 0.5 — Ω Total gate charge Qg — 32 — nc VDD = 10 V Gate to source charge Qgs — 9 — nc VGS = 10 V Gate to drain charge Qgd — 4.0 — nc ID = 30 A Turn-on delay time td(on) —12 — ns VGS = 10 V, ID = 15 A Rise time tr —20 — ns VDD ≅ 10 V Turn-off delay time td(off) —38 — ns RL = 0.67 Ω Fall time tf — 4.5 — ns Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.84 1.10 V IF = 30 A, VGS = 0 Note4 Body–drain diode reverse recovery time trr — 32 — ns IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test |
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