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LM4879IBPX Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LM4879IBPX Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 25 page Electrical Characteristics V DD = 3.0V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T A = 25˚C. (Continued) Symbol Parameter Conditions LM4879 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) N OUT Output Noise A-Weighted; Measured across 8 Ω BTL Input terminated with 10 Ω to ground 26 µV RMS Electrical Characteristics V DD = 2.6V (Notes 1, 2) The following specifications apply for the circuit shown in Figure 1 unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4879 Units (Limits) Typical Limit (Note 6) (Notes 7, 8) I DD Quiescent Power Supply Current V IN = 0V, 8 Ω BTL 3.5 mA I SD Shutdown Current V shutdown = GND 0.1 µA V OS Output Offset Voltage 5 mV P o Output Power THD+N = 1% (max); f = 1kHz R L =8 Ω 250 mW R L =4 Ω 350 THD+N Total Harmonic Distortion+Noise P o = 0.1Wrms; f = 1kHz 0.1 % PSRR Power Supply Rejection Ratio V ripple = 200mVsine p-p, CB = 1.0µF Input terminated with 10 Ω to ground 55 (f = 1kHz) 55 (f = 217Hz) dB Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified. Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum allowable power dissipation is PDMAX =(TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4879, see power derating curves for additional information. Note 4: Human body model, 100pF discharged through a 1.5k Ω resistor. Note 5: Machine Model, 220pF–240pF discharged through all pins. Note 6: Typicals are measured at 25˚C and represent the parametric norm. Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 8: For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a maximum of 2µA. Note 9: If the product is in shutdown mode, and VDD exceeds 6V (to a max of 8V VDD), then most of the excess current will flow through the ESD protection circuits. If the source impedance limits the current to a max of 10ma, then the part will be protected. If the part is enabled when VDD is above 6V, circuit performance will be curtailed or the part may be permanently damaged. Note 10: All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance. Note 11: Maximum power dissipation (PDMAX) in the device occurs at an output power level significantly below full output power. PDMAX can be calculated using Equation 1 shown in the Application section. It may also be obtained from the power dissipation graphs. Note 12: The stated θJA is achieved when the LLP package’s DAP is soldered to a 4in2 copper heatsink plain. www.national.com 5 |
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