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NSR15TW1T2 Datasheet(PDF) 2 Page - ON Semiconductor |
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NSR15TW1T2 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page  NSR15TW1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Breakdown Voltage (IR = 10 mA) VBR 15 20 – V Reverse Leakage (VR = 1 V) IR – 2 50 nA Forward Voltage (IF = 1 mA) VF1 – 390 415 mV Forward Voltage (IF = 10 mA) VF2 – 530 680 mV Delta VF (IF = 1 mA, All Diodes) DVF – 1 15 mV Capacitance (VF = 0 V, f = 1 MHz) CT – 0.8 1 pF Figure 1. Forward Current versus Forward Voltage at Temperatures VF, FORWARD VOLTAGE (V) 100 10 1 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Figure 2. Reverse Current versus Reverse Voltage VR, REVERSE VOLTAGE (V) 15 10 5 0 10 k 1 k 100 10 1 0.01 100 k Figure 3. Total Capacitance versus Reverse Voltage VR, REVERSE VOLTAGE (V) 1 0.9 0.7 0.6 8 6 5 4 3 2 1 0 Figure 4. Dynamic Resistance versus Forward Current IF, FORWARD CURRENT (mA) 100 10 1 0.1 100 10 1 0.5 1000 7 0.8 125 °C –25 °C 75 °C 25 °C 125 °C 75 °C 25 °C |
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