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UN4222 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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UN4222 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page 1 Transistors with built-in Resistor UN4221/4222/4223/4224 Silicon NPN epitaxial planer transistor For digital circuits s Features q Costs can be reduced through downsizing of the equipment and reduction of the number of parts. q New S type package, allowing supply with the radial taping. s Resistance by Part Number (R1)(R2) q UN4221 2.2k Ω 2.2k Ω q UN4222 4.7k Ω 4.7k Ω q UN4223 10k Ω 10k Ω q UN4224 2.2k Ω 10k Ω s Absolute Maximum Ratings (Ta=25˚C) Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 500 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C B C R1 R2 E s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 50V, IE = 0 1 µA ICEO VCE = 50V, IB = 0 1 µA UN4221 5 UN4222 IEBO VEB = 6V, IC = 0 2 mA UN4223/4224 1 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V UN4221 40 UN4222 hFE VCE = 10V, IC = 100mA 50 UN4223/4224 60 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 5mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 500Ω 4.9 V Output voltage low level VOL VCC = 5V, VB = 3.5V, RL = 500Ω 0.2 V UN4221/4224 2.2 UN4222 R1 (–30%) 4.7 (+30%) k Ω UN4223 10 Resistance ratio R1/R2 0.8 1.0 1.2 UN4224 0.17 0.22 0.27 Emitter cutoff current Forward current transfer ratio Input resis- tance 1 : Emitter 2 : Collector 3 : Base New S Type Package Unit: mm 4.0 ±0.2 marking 2.54 ±0.15 1.27 1.27 123 |
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