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Transistors with built-in Resistor

UN4221/4222/4223/4224

Silicon NPN epitaxial planer transistor

For digital circuits

q

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

q

New S type package, allowing supply with the radial taping.

q

UN4221

2.2k

Ω

2.2k

Ω

q

UN4222

4.7k

Ω

4.7k

Ω

q

UN4223

10k

Ω

10k

Ω

q

UN4224

2.2k

Ω

10k

Ω

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

50

V

Collector to emitter voltage

50

V

Collector current

500

mA

Total power dissipation

300

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

B

C

R1

R2

E

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

1

µA

1

µA

UN4221

5

UN4222

2

mA

UN4223/4224

1

Collector to base voltage

50

V

Collector to emitter voltage

50

V

UN4221

40

UN4222

50

UN4223/4224

60

Collector to emitter saturation voltage

0.25

V

Output voltage high level

4.9

V

Output voltage low level

0.2

V

UN4221/4224

2.2

UN4222

(–30%)

4.7

(+30%)

k

Ω

UN4223

10

Resistance ratio

0.8

1.0

1.2

UN4224

0.17

0.22

0.27

Emitter

cutoff

current

Forward

current

transfer

ratio

Input

resis-

tance

1 : Emitter

2 : Collector

3 : Base

New S Type Package

Unit: mm

4.0

±0.2

marking

2.54

±0.15

1.27

1.27

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