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UN5116 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN5116 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 17 page 2 Transistors with built-in Resistor UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/ 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA UN5111 – 0.5 UN5112/5114/511E/511D/511M/511N/511T – 0.2 UN5113 – 0.1 UN5115/5116/5117/5110 IEBO VEB = –6V, IC = 0 – 0.01 mA UN511F/511H –1.0 UN5119 –1.5 UN5118/511L/511V –2.0 UN511Z – 0.4 Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V UN511N/511T/511V/511Z –50 Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V UN511N/511T –50 UN5111 35 UN5112/511E 60 UN5113/5114/511M 80 UN5115*/5116*/5117*/5110* 160 460 UN511F/511D/5119/511H hFE VCE = –10V, IC = –5mA 30 UN5118/511L 20 UN511N/511T 80 400 UN511V 6 20 UN511Z 60 200 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V UN511V IC = –10mA, IB = –1.5mA – 0.25 Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V Output voltage low level VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 UN5113 VOL VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2 V UN511D VCC = –5V, VB = –10V, RL = 1kΩ – 0.2 UN511E VCC = –5V, VB = –6V, RL = 1kΩ – 0.2 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz UN511Z VCB = –10V, IE = 1mA, f = 200MHz 150 UN5111/5114/5115 10 UN5112/5117/511T 22 UN5113/5110/511D/511E 47 UN5116/511F/511L/511N/511Z R1 (–30%) 4.7 (+30%) k Ω UN5118 0.51 UN5119 1 UN511H/511M/511V 2.2 Emitter cutoff current Forward current transfer ratio Input resis- tance * hFE rank classification (UN5115/5116/5117/5110) Rank Q R S hFE 160 to 260 210 to 340 290 to 460 |
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