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K6T4016C3B Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6T4016C3B Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6T4016C3B Family CMOS SRAM Revision 5.0 May 2001 1 Document Title 256Kx16 bit Low Power CMOS Static RAM Revision History The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. Revision No. 0.0 0.1 1.0 2.0 3.0 4.0 4.01 5.0 Remark Advance Preliminary Final Final Final Final Final History Initial draft Revise - Die name change ; A to B Finalize Revise - Operating current update and release. ICC(Read/Write) = 30/60 → 15/75mA ICC1(Read/Write) = 30/60 → 15/75mA ICC2 = 160 → 130mA Revise - Change datasheet format - Remove ICC write value from table. Revise - Change test load at 55ns: 100pF → 50pF Errarta correction Revise - Add 55ns product for industrial temperature Draft Data June 28, 1996 September 19, 1996 December 17, 1996 February 17, 1997 February 17, 1998 June 22, 1998 August 8, 1998 May 22, 2001 |
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