1

Transistors with built-in Resistor

UN8231/UN8231A

Silicon NPN epitaxial planer transistor

For switching

q

q

Resistor built-in type, allowing downsizing of the equipment and

reduction of the number of parts.

q

Available in a type with radial taping.

1 : Emitter

2 : Collector

3 : Base

MT-2 Type Package

Unit: mm

Internal Connection

Parameter

Symbol

Ratings

Unit

UN8231

20

V

UN8231A

60

UN8231

20

V

UN8231A

50

Peak collector current

1.5

A

Collector current

0.7

A

Total power dissipation

W

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

B

C

R1(1k

Ω)

R2

(47k

Ω)

E

Collector to

base voltage

Collector to

emitter voltage

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

1

µA

Collector cutoff current

10

µA

Emitter cutoff current

0.5

mA

Collector to base voltage

UN8231

20

V

UN8231A

60

Collector to emitter voltage

UN8231

20

V

UN8231A

50

Forward current transfer ratio

800

2100

Collector to emitter saturation voltage

0.4

V

Input resistance

0.7

1

1.3

k

Ω

Resistance ratio

0.016

0.021

0.025

Transition frequency

200

MHz

1.7mm for the collector portion.

*Pulse measurement

2.5

±0.1

2.5

±0.5 2.5±0.5

6.9

±0.1

1.05

±0.05

(1.45)

4.0

0.7

0.8

0.65 max.

0.45

+0.1

–0.05

3

2

1