NSS35200MR6T1G datasheet(3/6 Pages) ONSEMI

Part #	NSS35200MR6T1G

Description	35 V, 5 A, Low VCE(sat) PNP Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NSS35200MR6T1G

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typical

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−35

−45

−

Vdc

Collector −Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−55

−65

−

Vdc

Emitter −Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−5.0

−7.0

−

Vdc

Collector Cutoff Current

(VCB = −35 Vdc, IE = 0)

ICBO

−

−0.03

−0.1

mAdc

Collector−Emitter Cutoff Current

(VCES = −35 Vdc)

ICES

−

−0.03

−0.1

mAdc

Emitter Cutoff Current

(VEB = −4.0 Vdc)

IEBO

−

−0.01

−0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 4)

(IC = −1.0 A, VCE = −1.5 V)

(IC = −1.5 A, VCE = −1.5 V)

(IC = −2.0 A, VCE = −3.0 V)

hFE

100

200

−

400

−

Collector −Emitter Saturation Voltage (Note 4)

(IC = −0.8 A, IB = −0.008 A)

(IC = −1.2 A, IB = −0.012 A)

(IC = −2.0 A, IB = −0.02 A)

VCE(sat)

−

−0.125

−0.175

−0.260

−0.15

−0.20

−0.31

V

Base −Emitter Saturation Voltage (Note 4)

(IC = −1.2 A, IB = −0.012 A)

VBE(sat)

−

−0.68

−0.85

V

Base −Emitter Turn−on Voltage (Note 4)

(IC = −2.0 A, VCE = −3.0 V)

VBE(on)

−

−0.81

−0.875

V

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)

fT

100

−

MHz

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)

Cibo

−

600

650

pF

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)

Cobo

−

85

100

pF

Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)

ton

−

35

−

nS

Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)

toff

−

225

−

nS

4. Pulsed Condition: Pulse Width = 300

msec, Duty Cycle ≤ 2%.

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