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RD00HHS1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RD00HHS1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 6 page  MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W RD00HHS1 MITSUBISHI ELECTRIC 10 Jan 2006 OBSERVE HANDLING PRECAUTIONS TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 10 15 20 25 30 35 -20 -15 -10 -5 0 5 10 Pin(dBm) 0 20 40 60 80 100 Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA Po ηｄ Gp Pin-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 024 6 8 10 Pin(mW) 40 50 60 70 80 90 100 Po ηd Idd Ta=25°C f=30MHz Vdd=12.5V Idq=50mA Vdd-Po CHARACTERISTICS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 24 68 10 12 14 Vdd(V) 0 40 80 120 Po Idd Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01 2 345 Vgs(V) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C Vgs-gm CHARACTORISTICS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 012 345 Vgs(V) Vds=10V Tc=-25~+75°C -25°C +75°C +25°C 3/6 |
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Similar Description - RD00HHS1 |
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