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TA33-5R2G25RD Datasheet(PDF) 1 Page - Vishay Siliconix |
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TA33-5R2G25RD Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 3 page Document Number: 60066 Revision 24-Feb-06 www.vishay.com 150 TA 33 Vishay Sfernice VISHAY THIN FILM • FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 • GERMANY +49.9287.710 FAX: +49 9287.70435 • ISRAEL +972.3.557.0945 FAX: +972.3.558.9121 • ITALY + 39.2.300.11919 FAX: +39.2.300.11999 • JAPAN +81.42.729.0661 FAX: +81.42.729.3400 • SINGAPORE +65.788.6668 FAX: +65.788.0988 • SWEDEN +46.8.594.70590 FAX: +46.8.594.70581 • UK +44 191 514 8237 FAX: +44 1953 457 722 • USA: (610) 407-4800 FAX: (610) 640-9081 Dual Value, Chip Resistor Center Tap Actual Size SCHEMATIC These tantalum chips combine excellent stability 0.07 % (2000 hours, rated power at 70 °C) with great power han- dling capacity. Two bonding pads per termination allow greater flexibility in hybrid layout design. RT R1 R2 RT = R1 + R2 with R1 = R2 Standard FEATURES • Center tap feature • Resistor material: self - passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost TEST SPECIFICATIONS CONDITIONS MATERIAL TANTALUM NITRIDE Resistance Range 50 ohms to 500 Kohms for R T = R1 + R2 TCR: Tracking ± 5 ppm/°C - 55 °C to + 155 °C Absolute ± 100 ppm/°C (± 50 ppm/°C on Request) - 55 °C to + 155 °C Tolerance: Ratio 1/1 standard Absolute ± 0.5 %, ± 1 %, ± 2 % Matching ± 0.5 % Standard Power Dissipation 250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C Stability ± 0.07 % typical, ± 0.1 Max. 2000 hrs. at +70 °C under Pn Working Voltage 50 Volts DC on R T Operating Temperature Range - 55 °C to + 155 °C Storage Temperature Range - 55 °C to + 155 °C Noise < - 35 dB typical MIL-STD-202 Method 308 Thermal EMF 0.01 µV/°C Shelf Life Stability 100 ppm 1 year at + 25 °C STANDARD ELECTRICAL SPECIFICATIONS ABS TRACKING TCR 100 ppm/ °C 5 ppm/ °C ABS RATIO TOL 0.5 % 0.5 % ◆ TYPICAL PERFORMANCE RoHS COMPLIANT |
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