XN1118 datasheet(2/2 Pages) PANASONIC | Silicon PNP epitaxial planer transistor

2 page

Composite Transistors

100

200

300

400

500

120

160

Ambient temperature Ta (˚C)

XN1118

PT — Ta

IC — VCE

VCE(sat) — IC

hFE — IC

Cob — VCB

IO — VIN

VIN — IO

–12

– 2

–10

–4

–8

–6

– 240

– 200

–160

–120

–80

–40

Collector to emitter voltage VCE (V)

Ta=25˚C

IB= –1.0mA

– 0.9mA

– 0.8mA

– 0.7mA

– 0.4mA

– 0.3mA

– 0.2mA

– 0.1mA

– 0.5mA

– 0.6mA

–0.01

–0.03

– 0.1 – 0.3

– 0.1

– 0.3

–1

–3

–10

–30

–100

–1

– 3

–10

– 30

–100

Collector current IC (mA)

IC/IB=10

Ta=75˚C

25˚C

– 25˚C

–1

– 3

120

160

–10

– 30

–100 – 300 –1000

Collector current IC (mA)

VCE= –10V

Ta=75˚C

25˚C

–25˚C

–0.1 –0.3

–1

– 3

–10

– 30

–100

Collector to base voltage

VCB (V)

f=1MHz

IE=0

Ta=25˚C

–1

–3

–0.4

–10

–30

–100

–300

–1000

–3000

–10000

–1.4

–1.2

–1.0

–0.8

–0.6

Input voltage VIN (V)

VO=–5V

Ta=25˚C

–0.01

–0.03

–0.1 –0.3

–0.1

–0.3

–1

–3

–10

–30

–100

–1

– 3

–10

– 30

–100

Output current IO (mA)

VO= – 0.2V

Ta=25˚C

Part Number	Components Description	Html View	Manufacturer
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XN1116	Silicon PNP epitaxial planer transistor	1 2	Panasonic Semiconductor
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