Electronic Components Datasheet Search |
|
HGTG30N120CN Datasheet(PDF) 3 Page - Fairchild Semiconductor |
|
HGTG30N120CN Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2001 Fairchild Semiconductor Corporation HGTG30N120CN Rev. B Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150 oC ICE = 30A VCE = 960V VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 18) -22 28 ns Current Rise Time trI -21 26 ns Current Turn-Off Delay Time td(OFF)I - 260 300 ns Current Fall Time tfI - 350 400 ns Turn-On Energy (Note 4) EON1 - 2.6 - mJ Turn-On Energy (Note 4) EON2 - 5.6 7.0 mJ Turn-Off Energy (Note 5) EOFF - 6.6 7.5 mJ Thermal Resistance Junction To Case RθJC - - 0.25 oC/W NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance Curves Unless Otherwise Specified FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME Electrical Specifications TC = 25 oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS TC, CASE TEMPERATURE ( oC) 50 10 0 40 20 30 60 VGE = 15V 25 75 100 125 150 50 70 80 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400 120 0 40 80 600 800 400 200 1000 1200 0 160 200 TJ = 150 oC, R G = 3Ω, VGE = 15V, L = 200µH fMAX1 = 0.05 / (td(OFF)I + td(ON)I) RØJC = 0.25 oC/W, SEE NOTES PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) fMAX2 = (PD - PC) / (EON2 + EOFF) TJ = 150 oC, R G = 3Ω, L = 1mH, VCE = 960V 5 ICE, COLLECTOR TO EMITTER CURRENT (A) 1 10 60 20 100 10 TC VGE 110oC 12V 15V 15V 75oC 110oC 75oC 12V VGE, GATE TO EMITTER VOLTAGE (V) 11 12 13 14 15 16 0 10 20 30 40 100 200 300 400 tSC ISC 50 500 0 VCE = 960V, RG = 3Ω, TJ = 125 oC HGTG30N120CN |
Similar Part No. - HGTG30N120CN |
|
Similar Description - HGTG30N120CN |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |