©2001 Fairchild Semiconductor Corporation

HGTG30N120CN Rev. B

Current Turn-On Delay Time

L = 1mH

Test Circuit (Figure 18)

-22

28

ns

Current Rise Time

-21

26

ns

Current Turn-Off Delay Time

-

260

300

ns

Current Fall Time

-

350

400

ns

Turn-On Energy (Note 4)

-

2.6

-

mJ

Turn-On Energy (Note 4)

-

5.6

7.0

mJ

Turn-Off Energy (Note 5)

-

6.6

7.5

mJ

Thermal Resistance Junction To Case

-

-

0.25

NOTES:

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in

Figure 18.

5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO

EMITTER CURRENT

FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

50

10

0

40

20

30

60

25

75

100

125

150

50

70

80

1400

120

0

40

80

600

800

400

200

1000

1200

0

160

200

(DUTY FACTOR = 50%)

5

1

10

60

20

100

10

12V

15V

15V

12V

11

12

13

14

15

16

0

10

20

30

40

100

200

300

400

50

500

0

HGTG30N120CN