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SI7892BDP-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI7892BDP-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 1 page Specification Comparison Vishay Siliconix Document Number 74064 www.vishay.com 06-May-05 Si7892BDP vs. Si7892DP Description: N-Channel, 30-V (D-S) MOSFET Package: PowerPAK ® SO-8 Pin Out: Identical Part Number Replacements: Si7892BDP-T1-E3 Replaces Si7892DP-T1-E3 Si7892BDP-T1-E3 Replaces Si7892DP-T1 Summary of Performance: The Si7892BDP is the replacement to the original Si7892DP; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si7892BDP Si7892DP Unit Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS +20 +20 V TA = 25°C 25 25 Continuous Drain Current TA = 70°C ID 20 20 Pulsed Drain Current IDM 60 60 Continuous Source Current (MOSFET Diode Conduction) IS 4.1 4.5 Avalanche Current L = 0.1 mH IAS 40 50 A TA = 25°C 5 5.4 Power Dissipation TA = 70°C PD 3.2 3.4 W Operating Junction & Storage Temperature Range Tj & Tstg -55 to 150 -55 to 150 °C Maximum Junction-to-Ambient RthJA 25 23 °C/W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Si7892BDP Si7892DP Parameter Symbol Min Typ Max Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) 1.0 3.0 1.0 3.0 V Gate-Body Leakage IGSS +100 +100 nA Zero Gate Voltage Drain Current IDSS 1 1 µA On-State Drain Current VGS = 10 V ID(on) 30 30 A VGS= 10 V 0.0034 0.0042 0.0037 0.0045 Drain-Source On-Resistance VGS = 4.5 V rDS(on) 0.0047 0.0057 0.0048 0.006 Ω Forward Transconductance gfs 85 80 S Diode Forward Voltage VSD 0.75 1.2 0.75 1.2 V Dynamic Input Capacitance Ciss 3775 NS Output Capacitance Coss 630 NS Reverse Transfer Capacitance Crss 295 NS pF Total Gate Charge Qg 27 40 25 35 Gate-Source Charge Qgs 11.4 6.7 Gate-Drain Charge Qgd 8.1 9.7 nC Gate Resistance Rg 0.5 1.2 2.0 0.5 NS 2.4 Ω Switching td(on) 20 30 17 30 Turn-On Time* tr 13 20 10 20 td(off) 62 100 65 130 Turn-Off Time* tf 20 35 35 60 Source-Drain Reverse Recovery Time trr 40 60 50 80 ns |
Similar Part No. - SI7892BDP-T1-E3 |
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Similar Description - SI7892BDP-T1-E3 |
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