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3LP02N Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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3LP02N Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 81000TS (KOTO) TA-2010 No.6553-1/4 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Ordering number:ENN6553 3LP02N SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Specifications Absolute Maximum Ratings at Ta = 25˚C Electrical Characteristics at Ta = 25˚C Package Dimensions unit:mm 2178 [3LP02N] Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. 1 : Source 2 : Drain 3 : Gate SANYO : NP ˚C ˚C Marking : XD Continued on next page. 5.0 4.0 0.5 0.45 0.45 4.0 0.44 1.3 1.3 12 3 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e c r u o S - o t - n i a r DV S S D 0 3 –V e g a t l o V e c r u o S - o t - e t a GV S S G 0 1 ±V ) C D ( t n e r r u C n i a r DID 2 . 0 –A ) e s l u p ( t n e r r u C n i a r DI P D W P ≤ e l c y c y t u d , s µ 0 1 ≤ % 18 . 0 –A n o i t a p i s s i D r e w o P e l b a w o ll APD 4 . 0W e r u t a r e p m e T l e n n a h Ch c T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V n w o d k a e r B e c r u o S - o t - n i a r DV S S D ) R B ( ID V , A m 1 – = S G 0 =0 3 –V t n e r r u C n i a r D e g a t l o V e t a G - o r e ZI S S D V S D V , V 0 3 – = S G 0 =0 1 –A µ t n e r r u C e g a k a e L e c r u o S - o t - e t a GI S S G V S G V , V 8 ± = S D 0 =0 1 ±A µ e g a t l o V f f o t u CV S G ) f f o (V S D I , V 0 1 – = D A µ 0 0 1 – =4 . 0 –4 . 1 –V e c n a t t i m d A r e f s n a r T d r a w r o F| s f y |V S D I , V 0 1 – = D A m 0 0 1 – =1 2 . 03 . 0S e c n a t s i s e R e t a t S - n O e c r u o S - o t - n i a r D c i t a t S R S D 1 ) n o (ID V , A m 0 0 1 – = S G V 4 – =4 . 21 . 3 Ω R S D 2 ) n o (ID V , A m 0 5 – = S G V 5 . 2 – =5 . 39 . 4 Ω R S D 3 ) n o (ID V , A m 0 1 – = S G V 5 . 1 – =0 10 2 Ω |
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