30A01SP

No.7512-1/4

Applications

•

Low-frequency power amplifier, muting circuit.

Features

•

Large current capacity.

•

Low collector-to-emitter saturation voltage (resistance).

RCE(sat) typ=0.67Ω[IC=0.3A, IB=15mA].

•

Small ON-resistance (Ron).

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

--30

V

Collector-to-Emitter Voltage

VCEO

--30

V

Emitter-to-Base Voltage

VEBO

--5

V

Collector Current

IC

--300

mA

Collector Current (Pulse)

ICP

--600

mA

Collector Dissipation

PC

400

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=--30V, IE=0

--0.1

µA

Emitter Cutoff Current

IEBO

VEB=--4V, IC=0

--0.1

µA

DC Current Gain

hFE

VCE=--2V, IC=--10mA

200

500

Marking : XQ

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7512

30A01SP

Low-Frequency

General-Purpose Amplifier Applications

Package Dimensions

unit : mm

2033A

[30A01SP]

O3003 TS IM TA-100647

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

PNP Epitaxial Planar Silicon Transistor

1 : Emitter

2 : Collector

3 : Base

SANYO : SPA

4.0

0.4

0.5

0.4

12

3

2.2

0.4

1.3

1.3

3.0

3.8nom