Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

K4M561633G-RF1L Datasheet(PDF) 5 Page - Samsung semiconductor

Part # K4M561633G-RF1L
Description  4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4M561633G-RF1L Datasheet(HTML) 5 Page - Samsung semiconductor

  K4M561633G-RF1L Datasheet HTML 1Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 2Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 3Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 4Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 5Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 6Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 7Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 8Page - Samsung semiconductor K4M561633G-RF1L Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 12 page
background image
K4M561633G - R(B)N/G/L/F
January 2006
Mobile SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85
°C for Extended, -25 to 70°C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
In commercial Temp : 45
°C/70°C, In extended Temp : 45°C/85°C
4. It has +/-5
°C tolerance.
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-1H
-1L
Operating Current
(One Bank Active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
80
80
80
mA
1
Precharge Standby Current in
power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
1.0
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
1.0
Precharge Standby Current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
15
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
5
Active Standby Current
in power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
8
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
8
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
30
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
20
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
90
80
80
mA
1
Refresh Current
ICC5
tRC
≥ tRC(min)
120
110
110
mA
2
Self Refresh Current
ICC6
CKE
≤ 0.2V
-N/L
600
uA
-G/F
Internal TCSR
45 *5
85/70
°C
3
Full Array
450
600
uA
1/2 of Full Array
400
450
1/4 of Full Array
350
400


Similar Part No. - K4M561633G-RF1L

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4M56163LG SAMSUNG-K4M56163LG Datasheet
113Kb / 12P
   2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163LG-BN/F1H SAMSUNG-K4M56163LG-BN/F1H Datasheet
113Kb / 12P
   2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163LG-BN/F1L SAMSUNG-K4M56163LG-BN/F1L Datasheet
113Kb / 12P
   2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163LG-BN/F75 SAMSUNG-K4M56163LG-BN/F75 Datasheet
113Kb / 12P
   2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163LG-BN/G SAMSUNG-K4M56163LG-BN/G Datasheet
113Kb / 12P
   2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
More results

Similar Description - K4M561633G-RF1L

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4S56163PF SAMSUNG-K4S56163PF Datasheet
114Kb / 12P
   4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163PE-R SAMSUNG-K4M56163PE-R Datasheet
112Kb / 12P
   4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M56163PG SAMSUNG-K4M56163PG Datasheet
115Kb / 12P
   4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153LF SAMSUNG-K4S51153LF Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LC SAMSUNG-K4M51163LC Datasheet
114Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK SAMSUNG-K4M64163PK Datasheet
115Kb / 12P
   1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S51153PF SAMSUNG-K4S51153PF Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163LF SAMSUNG-K4M28163LF Datasheet
115Kb / 12P
   2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E SAMSUNG-K4M511633E Datasheet
112Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163PC-RBE SAMSUNG-K4M51163PC-RBE Datasheet
115Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com