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Composite Transistors

XN4556

NPN epitaxial planer transistor

For amplification of the low frequency

q

Two elements incorporated into one package.

q

Reduction of the mounting area and assembly cost by one half.

q

2SD1149

× 2 elements

1 : Collector (Tr1)

4 : Collector (Tr2)

2 : Base (Tr2)

5 : Base (Tr1)

3 : Emitter (Tr2)

6 : Emitter (Tr1)

EIAJ : SC–74

Mini Type Package (6–pin)

Unit: mm

Marking Symbol:

EP

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

100

V

Collector to emitter voltage

100

V

Emitter to base voltage

15

V

Collector current

20

mA

Peak collector current

50

mA

Total power dissipation

300

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Rating

of

element

Overall

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector to base voltage

100

V

Collector to emitter voltage

100

V

Emitter to base voltage

15

V

Collector cutoff current

0.1

µA

1.0

µA

Forward current transfer ratio

400

2000

Collector to emitter saturation voltage

0.05

0.2

V

Noise voltage

NV

80

mV

Transition frequency

150

MHz

2.8

+0.2

–0.3

1.5

0.65

±0.15

0.65

±0.15

1

6

5

4

3

2

+0.25

–0.05

0.4

±0.2

0.1 to 0.3

61

2

Tr2

Tr1

5

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