MRF18090BR3 MRF18090BSR3

1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. To be used in class AB for GSM and EDGE cellular radio

applications.

• GSM and EDGE Performances, Full Frequency Band

Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)

Efficiency — 45% (Typ) @ 90 Watts (CW)

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

-0.5, +65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Derate above 25°C

250

1.43

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

Document Number: MRF18090B

Rev. 7, 5/2006

Freescale Semiconductor

Technical Data

MRF18090BR3

MRF18090BSR3

1.90 - 1.99 GHz, 90 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETS

CASE 465B-03, STYLE 1

NI-880

MRF18090BR3

CASE 465C-02, STYLE 1

NI-880S

MRF18090BSR3

© Freescale Semiconductor, Inc., 2006. All rights reserved.