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Composite Transistors

XP111H

Silicon PNP epitaxial planer transistor

For switching/digital circuits

q

Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor)

q

Reduction of the mounting area and assembly cost by one half.

q

UN111H

× 2 elements

Unit: mm

Marking Symbol:

9X

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

–50

V

Collector to emitter voltage

–50

V

Collector current

–100

mA

Total power dissipation

150

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Rating

of

element

Overall

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector to base voltage

–50

V

Collector to emitter voltage

–50

V

Collector cutoff current

– 0.1

µA

– 0.5

µA

Emitter cutoff current

– 0.5

mA

Forward current transfer ratio

30

*1

0.5

0.99

Collector to emitter saturation voltage

– 0.25

V

Output voltage high level

–4.9

V

Output voltage low level

– 0.2

V

Transition frequency

80

MHz

Input resistance

–30%

2.2

+30%

k

Ω

Resistance ratio

0.17

0.22

0.27

1 : Base (Tr1)

4 : Collector (Tr2)

2 : Emitter

5 : Collector (Tr1)

3 : Base (Tr2)

EIAJ : SC–88A

S–Mini Type Package (5–pin)

2.1

±0.1

0.425

1.25

±0.1

1

2

3

4

5

0.2

±0.1

0.425

1

5

Tr2

Tr1

2

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