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XP111H Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XP111H Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Composite Transistors XP111H Silicon PNP epitaxial planer transistor For switching/digital circuits s Features q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q UN111H × 2 elements s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 9X Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA Emitter cutoff current IEBO VEB = –6V, IC = 0 – 0.5 mA Forward current transfer ratio hFE VCE = –10V, IC = –5mA 30 Forward current transfer hFE ratio hFE (small/large) *1 VCE = –10V, IC = –5mA 0.5 0.99 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V Output voltage low level VOL VCC = –5V, VB = –2.5V, RL = 1kΩ – 0.2 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Input resistance R1 –30% 2.2 +30% k Ω Resistance ratio R1/R2 0.17 0.22 0.27 *1 Ratio between 2 elements 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1 ±0.1 0.425 1.25 ±0.1 1 2 3 4 5 0.2 ±0.1 0.425 1 5 Tr2 Tr1 2 34 |
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