1

Composite Transistors

XP1554

Silicon NPN epitaxial planer transistor

For high speed switching

q

Two elements incorporated into one package.

(Emitter-coupled transistors)

q

Reduction of the mounting area and assembly cost by one half.

q

q

2SC3757

× 2 elements

Unit: mm

Marking Symbol:

EU

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

40

V

Collector to emitter voltage

40

V

Emitter to base voltage

5V

Collector current

100

mA

Peak collector current

300

mA

Total power dissipation

150

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Rating

of

element

Overall

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff current

0.1

µA

Emitter cutoff current

0.1

µA

Forward current transfer ratio

60

200

Collector to emitter saturation voltage

0.17

0.25

V

Base to emitter saturation voltage

1.0

V

Transition frequency

450

MHz

Collector output capacitance

2

6

pF

Turn-on time

17

ns

Turn-off time

17

ns

Storage time

10

ns

1 : Base (Tr1)

4 : Collector (Tr2)

2 : Emitter

5 : Collector (Tr1)

3 : Base (Tr2)

EIAJ : SC–88A

S–Mini Type Package (5–pin)

2.1

±0.1

0.425

1.25

±0.1

1

2

3

4

5

0.2

±0.1

0.425

15

Tr2

Tr1

2

34