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WFW10N80 Datasheet(PDF) 1 Page - Wisdom technologies Int`l |
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WFW10N80 Datasheet(HTML) 1 Page - Wisdom technologies Int`l |
1 / 2 page ● ● ● ▲ ◀ ● ● ● ▲ ◀ Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 800 V ID Continuous Drain Current(@TC = 25°C) 10 A Continuous Drain Current(@TC = 100°C) 6.3 A IDM Drain Current Pulsed (Note 1) 40 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 960 mJ EAR Repetitive Avalanche Energy (Note 1) 26 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Total Power Dissipation(@TC = 25 °C) 260 W Derating Factor above 25 °C 2.08 W/°C TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case - - 0.48 °C/W RθCS Thermal Resistance, Case to Sink - 0.24 - °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 40 °C/W WFW10N80 1/2 Features ■ RDS(on) (Max 1.05 Ω )@VGS=10V ■ Gate Charge (Typical 55nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. N-Channel MOSFET Wisdom Semiconductor Copyright@Wisdom Semiconductor Inc., All rights reserved. Symbol 2. Drain 3. Source 1. Gate PROVISIONAL TO-247 G S D |
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